Power MOSFET (P-Type, IRF9Z34NPBF, 55v-17A max.)
€0.96
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P-Channel Power MOSFET (IRF9Z34NPBF) for switching high-voltage loads up to 55V and 17A. It installs between the positive supply rail and the load (high-side switching).
The IRF9Z34NPBF is a unipolar P-Channel power MOSFET (HEXFET technology) designed for high-voltage and high-current switching applications. Housed in a TO-220AB package, it serves as an ideal high-side switch, placed between the positive supply rail and the load.
This component handles a Drain-Source voltage of -55 V and a continuous current of -17 A, with a typical on-state resistance (Rds(on)) of 100 mΩ. It is perfect for driving DC motors, LED arrays, or other resistive/inductive loads controlled by microcontrollers or logic circuits.
Specifications
- Type: P-Channel MOSFET
- Drain-Source Voltage (Vds): -55 V
- Continuous Drain Current (Id): -17 A
- Maximum Power Dissipation: 56 W
- On-State Resistance (Rds(on)): 100 mΩ (max)
- Package: TO-220AB (with mounting hole)
- Technology: HEXFET, Through-Hole (THT)
- Total Gate Charge (Qg): 23.3 nC
- Thermal Resistance Junction-to-Case (RθJC): 2.7 °C/W
Technical Note: For a P-channel MOSFET, the gate must be pulled to the source potential (or lower) to turn it on, and released towards the supply voltage to turn it off. A pull-up resistor on the gate is often recommended for stable operation.
ELCIRF9Z34NPBF
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P-Channel Power MOSFET (IRF9Z34NPBF) for switching high-voltage loads up to 55V and 17A. It installs between the positive supply rail and the load (high-side switching).