Power MOSFET (N-Type, STP11NM60FD, 600v-11A max.)

Manufacturer: STMicroelectronics

Product Category: MOSFET

Technology: Yes

Mounting Style: Through Hole

Package/Box: TO-220-3

Transistor Polarity: N-Channel

Number of channels: 1 Channel

Vds - Drain-source breakdown voltage: 600 V

Id - Continuous leakage current: 11 A

Rds On - Drain-source resistance: 450 mOhms

Vgs - Gate-source voltage: - 30 V, + 30 V

Vgs th - Gate-source threshold voltage: 3 V

Qg - Gate charge: 40 nC

Min. operating temperature: - 65 C

Max. operating temperature: +150 C

Pd - Energy dissipation: 35 W

Channel mode: Enhancement

Series: STP11NM60FD

Configuration: Single

Fall time: 15 ns

Height: 9.3mm

Length: 10.4mm

Product Type: MOSFET

Rise time: 16 ns

1000

Subcategory: MOSFETs

Transistor Type: 1 N-Channel

Standard On Delay: 20 ns

Width: 4.6mm

Unit weight: 2 g