Power MOSFET (N-Type, STP11NM60FD, 600v-11A max.)

The STP11NM60FD Power MOSFET by STMicroelectronics is an N-channel transistor designed for through-hole mounting in a TO-220-3 package. It features a drain-source breakdown voltage (Vds) of 600 V and a continuous current (Id) of 11 A, with a typical on-state resistance (Rds(on)) of 450 mΩ.

This component is ideal for switching inductive or resistive loads such as motors, relays, or power supplies. Its maximum gate-source voltage of ±30 V and low gate charge (40 nC) make it suitable for driving by microcontrollers or logic drivers.

Specifications

• Drain-Source Breakdown Voltage (Vds): 600 V
• Continuous Drain Current (Id): 11 A
• On-State Resistance (Rds(on)): 450 mΩ
• Gate-Source Voltage (Vgs): ±30 V
• Gate-Source Threshold Voltage (Vgs(th)): 3 V
• Gate Charge (Qg): 40 nC
• Power Dissipation (Pd): 35 W
• Package Type: TO-220-3
• Operating Temperature: -65 °C to +150 °C
• Rise / Fall Time: 16 ns / 15 ns